APT22F120L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1040W Tc

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Finish :

Pure Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Turn On Delay Time :

45 ns

Turn-Off Delay Time :

145 ns

Drain-source On Resistance-Max :

0.7Ohm

Operating Mode :

ENHANCEMENT MODE

Rise Time :

27ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Mounting Type :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

700m Ω @ 12A, 10V

Current Rating :

22A

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

1.2kV

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

1200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

8370pF @ 25V

ECCN Code :

EAR99

Pin Count :

3

Pbfree Code :

yes

Number of Terminations :

3

Series :

POWER MOS 8™

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

23A

Fall Time (Typ) :

42 ns

Package / Case :

TO-264-3, TO-264AA

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

90A

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.04kW

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

FET Type :

N-Channel

Mount :

Through Hole