APT22F120B2
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- Mfr.Part #
- APT22F120B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 23A T-MAX
- Stock
- 12,915
- In Stock ：
- 12,915
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 1.04kW
- Current Rating :
- 22A
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.7Ohm
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 8370pF @ 25V
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 42 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1040W Tc
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 1200V
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 90A
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 23A
- Terminal Finish :
- PURE MATTE TIN
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3 Variant
- Turn On Delay Time :
- 45 ns
- Turn-Off Delay Time :
- 145 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Rise Time :
- 27ns
- Series :
- POWER MOS 8™
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Voltage - Rated DC :
- 1.2kV
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 12A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Datasheets
- APT22F120B2
N-Channel Tube 700m Ω @ 12A, 10V ±30V 8370pF @ 25V 260nC @ 10V 1200V TO-247-3 Variant
APT22F120B2 Overview
A device's maximum input capacitance is 8370pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 23A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 145 ns.Its maximum pulsed drain current is 90A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT22F120B2 Features
a continuous drain current (ID) of 23A
the turn-off delay time is 145 ns
based on its rated peak drain current 90A.
a 1200V drain to source voltage (Vdss)
APT22F120B2 Applications
There are a lot of Microsemi Corporation
APT22F120B2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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