APT20M45BVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Voltage - Rated DC :

200V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Pure Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 25V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Rise Time :

14ns

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Turn-Off Delay Time :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

45m Ω @ 500mA, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Terminations :

3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.045Ohm

Continuous Drain Current (ID) :

56A

Published :

1997

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSFM-T3

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

224A

Series :

POWER MOS V®

Pbfree Code :

yes

Lead Free :

Lead Free

Turn On Delay Time :

12 ns

Power Dissipation-Max :

300W Tc

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Current Rating :

56A

Pin Count :

3

Fall Time (Typ) :

7 ns

Terminal Position :

Single

Factory Lead Time :

31 Weeks

Power Dissipation :

300W

Number of Elements :

1