APT20M45BVFRG
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- Mfr.Part #
- APT20M45BVFRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 56A TO247
- Stock
- 46,746
- In Stock ：
- 46,746
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-247AD
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Terminal Finish :
- TIN SILVER COPPER
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Power Dissipation-Max :
- 300W Tc
- JESD-30 Code :
- R-PSFM-T3
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 200V
- Fall Time (Typ) :
- 7 ns
- Rise Time :
- 14ns
- Power Dissipation :
- 300W
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 34 Weeks
- Series :
- POWER MOS V®
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Turn On Delay Time :
- 12 ns
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 56A
- Terminal Position :
- Single
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 43 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 56A
- Pulsed Drain Current-Max (IDM) :
- 224A
- JESD-609 Code :
- e1
- Drain-source On Resistance-Max :
- 0.045Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4860pF @ 25V
- Datasheets
- APT20M45BVFRG
N-Channel Tube 45m Ω @ 500mA, 10V ±30V 4860pF @ 25V 195nC @ 10V TO-247-3
APT20M45BVFRG Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4860pF @ 25V.This device conducts a continuous drain current (ID) of 56A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 224A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT20M45BVFRG Features
a continuous drain current (ID) of 56A
the turn-off delay time is 43 ns
based on its rated peak drain current 224A.
APT20M45BVFRG Applications
There are a lot of Microsemi Corporation
APT20M45BVFRG applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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