APT20M38BVRG
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- Mfr.Part #
- APT20M38BVRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 67A TO247
- Stock
- 40
- In Stock ：
- 40
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 25V
- Series :
- POWER MOS V®
- Packaging :
- Tube
- Terminal Position :
- Single
- Voltage - Rated DC :
- 200V
- Continuous Drain Current (ID) :
- 67A
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 500mA, 10V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 48 ns
- Transistor Element Material :
- SILICON
- Rise Time :
- 21ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 370W
- JESD-609 Code :
- e1
- FET Type :
- N-Channel
- Current Rating :
- 67A
- Turn On Delay Time :
- 14 ns
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Fall Time (Typ) :
- 10 ns
- Power Dissipation-Max :
- 370W Tc
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 1997
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 31 Weeks
- Gate to Source Voltage (Vgs) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 268A
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Drain-source On Resistance-Max :
- 0.038Ohm
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Additional Feature :
- High Voltage
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT20M38BVRG
N-Channel Tube 38m Ω @ 500mA, 10V ±30V 6120pF @ 25V 225nC @ 10V TO-247-3
APT20M38BVRG Overview
The maximum input capacitance of this device is 6120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 67A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 268A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT20M38BVRG Features
a continuous drain current (ID) of 67A
the turn-off delay time is 48 ns
based on its rated peak drain current 268A.
APT20M38BVRG Applications
There are a lot of Microsemi Corporation
APT20M38BVRG applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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