APT20M38BVFRG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

6120pF @ 25V

Pulsed Drain Current-Max (IDM) :

268A

Vgs (Max) :

±30V

Fall Time (Typ) :

10 ns

Pin Count :

3

JESD-609 Code :

e1

Lead Free :

Lead Free

Turn-Off Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Current Rating :

67A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

370W Tc

Series :

POWER MOS V®

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

370W

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Packaging :

Tube

Number of Elements :

1

Mount :

Through Hole

Mounting Type :

Through Hole

Radiation Hardening :

No

Pbfree Code :

yes

Rise Time :

21ns

Vgs(th) (Max) @ Id :

4V @ 1mA

ECCN Code :

EAR99

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

JEDEC-95 Code :

TO-247AD

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

38m Ω @ 500mA, 10V

FET Type :

N-Channel

Package / Case :

TO-247-3

Voltage - Rated DC :

200V

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Published :

1997

Drain-source On Resistance-Max :

0.038Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

67A

Case Connection :

DRAIN

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE ENERGY RATED

Turn On Delay Time :

14 ns