APT20M22JVRU2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

450W Tc

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Number of Terminations :

4

Power Dissipation :

450W

Pulsed Drain Current-Max (IDM) :

388A

Package / Case :

SOT-227-4, miniBLOC

FET Type :

N-Channel

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

25ns

Avalanche Energy Rating (Eas) :

2500 mJ

Case Connection :

Isolated

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

8500pF @ 25V

Factory Lead Time :

36 Weeks

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount, Screw

Mounting Type :

Chassis Mount

DS Breakdown Voltage-Min :

200V

Drain-source On Resistance-Max :

0.022Ohm

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Number of Elements :

1

Drain to Source Voltage (Vdss) :

200V

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Continuous Drain Current (ID) :

97A

Rds On (Max) @ Id, Vgs :

22m Ω @ 48.5A, 10V

Number of Pins :

4

ECCN Code :

EAR99

Published :

2006

Fall Time (Typ) :

8 ns

Pin Count :

4

Turn-Off Delay Time :

48 ns

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Terminal Position :

UPPER