APT20M22B2VRG
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- Mfr.Part #
- APT20M22B2VRG
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A T-MAX
- Stock
- 31,447
- In Stock ：
- 31,447
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 100A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Turn On Delay Time :
- 16 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 48 ns
- Current Rating :
- 75A
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- TIN SILVER COPPER
- Rise Time :
- 25ns
- Power Dissipation-Max :
- 520W Tc
- Power Dissipation :
- 520W
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Gate to Source Voltage (Vgs) :
- 30V
- Drain-source On Resistance-Max :
- 0.022Ohm
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Package / Case :
- TO-247-3 Variant
- Number of Pins :
- 3
- Series :
- POWER MOS V®
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 435nC @ 10V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Terminal Position :
- Single
- Published :
- 1997
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 500mA, 10V
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 5 ns
- Packaging :
- Tube
- Datasheets
- APT20M22B2VRG
N-Channel Tube 22m Ω @ 500mA, 10V ±30V 10200pF @ 25V 435nC @ 10V TO-247-3 Variant
APT20M22B2VRG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 10200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 400A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT20M22B2VRG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 48 ns
based on its rated peak drain current 400A.
APT20M22B2VRG Applications
There are a lot of Microsemi Corporation
APT20M22B2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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