APT20M11JVR

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

UPPER

Avalanche Energy Rating (Eas) :

3600 mJ

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Weight :

30.000004g

Number of Elements :

1

Mounting Type :

Chassis Mount

Pin Count :

4

Rise Time :

40ns

Lead Free :

Lead Free

Packaging :

Tube

Turn On Delay Time :

20 ns

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Mount :

Chassis Mount, Screw

Number of Channels :

1

Width :

25.4mm

Rds On (Max) @ Id, Vgs :

11m Ω @ 500mA, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

175A Tc

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation :

700W

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

700A

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Element Configuration :

Single

Factory Lead Time :

19 Weeks

Additional Feature :

High Voltage

Voltage - Rated DC :

200V

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Continuous Drain Current (ID) :

175A

Current Rating :

175A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

21600pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Length :

38.2mm

Turn-Off Delay Time :

75 ns

Height :

9.6mm

Vgs(th) (Max) @ Id :

4V @ 5mA

Power Dissipation-Max :

700W Tc

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Number of Pins :

4

Transistor Application :

SWITCHING

Series :

POWER MOS V®

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

FET Type :

N-Channel