APT20M11JVFR
- Mfr.Part #
- APT20M11JVFR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 175A ISOTOP
- Stock
- 22,414
- In Stock :
- 22,414
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Mount :
- Chassis Mount, Screw
- Number of Pins :
- 4
- Packaging :
- Tube
- Additional Feature :
- FREDFET
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Voltage - Rated DC :
- 200V
- Number of Channels :
- 1
- Package / Case :
- SOT-227-4, miniBLOC
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 10 ns
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 75 ns
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Series :
- POWER MOS V®
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 500mA, 10V
- Continuous Drain Current (ID) :
- 175A
- Terminal Form :
- UNSPECIFIED
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Pin Count :
- 4
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rise Time :
- 40ns
- Current Rating :
- 175A
- Pulsed Drain Current-Max (IDM) :
- 700A
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Turn On Delay Time :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 38.2mm
- Weight :
- 30.000004g
- Element Configuration :
- Single
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Published :
- 1997
- Height :
- 9.6mm
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 700W
- Power Dissipation-Max :
- 700W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 21600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 175A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 25.4mm
- Factory Lead Time :
- 28 Weeks
- Datasheets
- APT20M11JVFR

N-Channel Tube 11m Ω @ 500mA, 10V ±30V 21600pF @ 25V 180nC @ 10V SOT-227-4, miniBLOC
APT20M11JVFR Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3600 mJ.A device's maximal input capacitance is 21600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 175A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 700A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
APT20M11JVFR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 175A
the turn-off delay time is 75 ns
based on its rated peak drain current 700A.
APT20M11JVFR Applications
There are a lot of Microsemi Corporation
APT20M11JVFR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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