APT20F50S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

20A

Power Dissipation-Max :

290W Tc

RoHS Status :

RoHS Compliant

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Published :

1997

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

Terminal Form :

Gull wing

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Terminations :

2

Series :

POWER MOS 8™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

PURE MATTE TIN

Pin Count :

3

Avalanche Energy Rating (Eas) :

405 mJ

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Rds On (Max) @ Id, Vgs :

300m Ω @ 10A, 10V

Terminal Position :

Single

Number of Elements :

1

Packaging :

Tube

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

60A

Vgs(th) (Max) @ Id :

5V @ 500µA

Drain-source On Resistance-Max :

0.3Ohm

Pbfree Code :

yes

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage (Max Rds On,Min Rds On) :

10V