APT20F50S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.3Ohm

Vgs(th) (Max) @ Id :

5V @ 500µA

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Pulsed Drain Current-Max (IDM) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Terminations :

2

Packaging :

Tube

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Series :

POWER MOS 8™

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

245

Published :

1997

Terminal Position :

Single

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

300m Ω @ 10A, 10V

Power Dissipation-Max :

290W Tc

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

405 mJ

Mount :

Surface Mount

Terminal Finish :

PURE MATTE TIN