APT20F50B
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- Mfr.Part #
- APT20F50B
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 20A TO247
- Stock
- 25,663
- In Stock ：
- 25,663
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 34 ns
- Turn On Delay Time :
- 13 ns
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Continuous Drain Current (ID) :
- 20A
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 500µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 405 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2950pF @ 25V
- Drain-source On Resistance-Max :
- 0.3Ohm
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Elements :
- 1
- Packaging :
- Tube
- Voltage - Rated DC :
- 500V
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 290W Tc
- Current Rating :
- 20A
- Rise Time :
- 15ns
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 11 ns
- Power Dissipation :
- 290W
- Datasheets
- APT20F50B
N-Channel Tube 300m Ω @ 10A, 10V ±30V 2950pF @ 25V 75nC @ 10V TO-247-3
APT20F50B Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 405 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2950pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 34 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
APT20F50B Features
the avalanche energy rating (Eas) is 405 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 34 ns
based on its rated peak drain current 60A.
APT20F50B Applications
There are a lot of Microsemi Corporation
APT20F50B applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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