AOW11S60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

545pF

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Published :

2010

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

178W

Max Operating Temperature :

150°C

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Rds On Max :

399 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

399mOhm @ 3.8A, 10V

Power Dissipation-Max :

178W Tc

Supplier Device Package :

TO-262

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 100V

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

11A

Operating Temperature :

-55°C~150°C TJ