AOU2N60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation-Max :

56.8W Tc

Drain Current-Max (Abs) (ID) :

2A

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

2A

FET Type :

N-Channel

Vgs (Max) :

±30V

Number of Elements :

1

Number of Pins :

3

Published :

2010

Operating Temperature :

-50°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

8A

Mount :

Through Hole

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation :

56.8W

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 1A, 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V