AOTF8N80

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009

Pulsed Drain Current-Max (IDM) :

26A

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

50W Tc

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Mount :

Through Hole

Continuous Drain Current (ID) :

7.4A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Avalanche Energy Rating (Eas) :

433 mJ

Transistor Element Material :

SILICON

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.63 Ω @ 4A, 10V