AOTF4S60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

77 mJ

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Series :

aMOS™

Published :

2009

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

31W Tc

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

4A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Terminal Position :

Single

Power Dissipation :

31W

Input Capacitance (Ciss) (Max) @ Vds :

263pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

DS Breakdown Voltage-Min :

600V

Packaging :

Tube

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

900m Ω @ 2A, 10V

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

4A

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Drain-source On Resistance-Max :

0.9Ohm

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel