AOTF296L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Ta 41A Tc

Avalanche Energy Rating (Eas) :

80 mJ

Terminal Position :

Single

Power Dissipation-Max :

2.2W Ta 36.5W Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0125Ohm

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

2785pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Rds On (Max) @ Id, Vgs :

10m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

100V

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Pulsed Drain Current-Max (IDM) :

160A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Continuous Drain Current (ID) :

41A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Published :

2006

Number of Elements :

1

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Packaging :

Tube