AOTF11S60L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Through Hole

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

11A

Factory Lead Time :

18 Weeks

Vgs (Max) :

±30V

Terminal Position :

Single

Transistor Element Material :

SILICON

Series :

aMOS™

Power Dissipation :

38W

Number of Elements :

1

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 100V

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

399m Ω @ 3.8A, 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

38W Tc

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

45A

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Number of Pins :

3

Published :

2009

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V