AOT4S60L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Pbfree Code :

yes

Power Dissipation :

83W

Avalanche Energy Rating (Eas) :

77 mJ

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Published :

2010

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.9Ohm

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

4A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4A Tc

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2A, 10V

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

263pF @ 100V

Series :

aMOS™

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Mount :

Through Hole

Power Dissipation-Max :

83W Tc

Drain Current-Max (Abs) (ID) :

4A

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Pin Count :

3