AOT11S60L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Series :

aMOS™

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

399m Ω @ 3.8A, 10V

Pulsed Drain Current-Max (IDM) :

45A

Vgs (Max) :

±30V

Packaging :

Tube

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

11A

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.399Ohm

Number of Terminations :

3

Published :

2010

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 100V

Power Dissipation-Max :

178W Tc

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4.1V @ 250μA

FET Type :

N-Channel

Power Dissipation :

178W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1