AONR21357

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

136A

JESD-30 Code :

S-PDSO-F5

Power Dissipation-Max :

5W Ta 30W Tc

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 20A, 10V

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Drain-source On Resistance-Max :

0.0078Ohm

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

76 mJ

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

21A Ta 34A Tc

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2830pF @ 15V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Package / Case :

8-PowerVDFN

Drain Current-Max (Abs) (ID) :

34A