AON6590

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Published :

2011

Drain-source On Resistance-Max :

0.0015Ohm

Continuous Drain Current (ID) :

100A

Avalanche Energy Rating (Eas) :

634 mJ

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

67A Ta 100A Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

Pulsed Drain Current-Max (IDM) :

400A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

8320pF @ 20V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Power Dissipation-Max :

7.3W Ta 208W Tc

Factory Lead Time :

18 Weeks

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

0.99m Ω @ 20A, 10V

Package / Case :

8-PowerSMD, Flat Leads

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V