AON6560
- Mfr.Part #
- AON6560
- Manufacturer
- Alpha and Omega Semiconductor, Inc.
- Package / Case
- 8-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 84A/200A 8DFN
- Stock
- 9,304
- In Stock :
- 9,304
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- Manufacturer :
- Alpha and Omega Semiconductor, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 7.3W Ta 208W Tc
- Continuous Drain Current (ID) :
- 200A
- Drain to Source Resistance :
- 550μOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Supplier Device Package :
- 8-DFN (5x6)
- Manufacturer Package Identifier :
- DFN5x6_8L_EP1_P
- Factory Lead Time :
- 18 Weeks
- Number of Channels :
- 1
- Power Dissipation :
- 7.3W
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 15V
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On Max :
- 680 mΩ
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 1.4V
- Gate Charge (Qg) (Max) @ Vgs :
- 325nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Height :
- 1mm
- Current - Continuous Drain (Id) @ 25°C :
- 84A Ta 200A Tc
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 0.62mOhm @ 20A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Published :
- 2010
- Input Capacitance :
- 11.5nF
- Turn-Off Delay Time :
- 115.5 ns
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Package / Case :
- 8-PowerSMD, Flat Leads
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 16 ns
- Mounting Type :
- Surface Mount
- Datasheets
- AON6560
N-Channel Tape & Reel (TR) 0.62mOhm @ 20A, 10V ±20V 11500pF @ 15V 325nC @ 10V 30V 8-PowerSMD, Flat Leads
AON6560 Overview
A device's maximal input capacitance is 11500pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 200A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 115.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 550μOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.4V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
AON6560 Features
a continuous drain current (ID) of 200A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 115.5 ns
single MOSFETs transistor is 550μOhm
a threshold voltage of 1.4V
a 30V drain to source voltage (Vdss)
AON6560 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AON6560 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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