AON6362

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

7 mJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Drain-source On Resistance-Max :

0.0086Ohm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerSMD, Flat Leads

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

100A

Published :

2011

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

27A Ta 60A Tc

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

60A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 15V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

6.2W Ta 31W Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA