AON6312

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-PowerSMD, Flat Leads

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

Avalanche Energy Rating (Eas) :

32 mJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pulsed Drain Current-Max (IDM) :

260A

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-F5

Drain-source On Resistance-Max :

0.0025Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

130A

Transistor Application :

SWITCHING

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.85m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Power Dissipation-Max :

50W Tc

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED