AOI508

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

70A

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

68 mJ

Number of Terminations :

3

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

22A Ta 70A Tc

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.003Ohm

Pulsed Drain Current-Max (IDM) :

159A

FET Type :

N-Channel

Number of Elements :

1

RoHS Status :

RoHS Compliant

Terminal Position :

Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Stub Leads, IPak

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

3m Ω @ 20A, 10V

JEDEC-95 Code :

TO-251A

Input Capacitance (Ciss) (Max) @ Vds :

2010pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2.5W Ta 50W Tc

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V