AOI2N60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

FET Type :

N-Channel

Operating Temperature :

-50°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 1A, 10V

Drain Current-Max (Abs) (ID) :

2A

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Power Dissipation-Max :

56.8W Tc

Published :

2011

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

8A

Avalanche Energy Rating (Eas) :

120 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

3

Packaging :

Tube

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Stub Leads, IPak

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

2A