AOI11S60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mounting Type :

Through Hole

Packaging :

Tube

Published :

2011

Transistor Element Material :

SILICON

Series :

aMOS™

Rds On (Max) @ Id, Vgs :

399m Ω @ 3.8A, 10V

Power Dissipation :

208W

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Number of Elements :

1

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-251-3 Stub Leads, IPak

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

45A

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

208W Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 100V

Number of Terminations :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

11A