AOD4N60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Operating Temperature :

-50°C~150°C TJ

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

4A

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Terminal Position :

Single

Number of Terminations :

2

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 2A, 10V

Number of Elements :

1

Power Dissipation-Max :

104W Tc

Published :

2011

Avalanche Energy Rating (Eas) :

235 mJ

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)