AOD2N60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

8A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Terminal Position :

Single

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Radiation Hardening :

No

Power Dissipation-Max :

56.8W Tc

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2A

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 1A, 10V

Operating Temperature :

-50°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 25V

Power Dissipation :

56.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)