AOD11S60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

208W Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

545pF @ 100V

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4.1V @ 250μA

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

FET Type :

N-Channel

Continuous Drain Current (ID) :

11A

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Rds On (Max) @ Id, Vgs :

399m Ω @ 3.8A, 10V

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Power Dissipation :

208W

Series :

aMOS™

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

45A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.399Ohm

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G3

Pbfree Code :

yes

Case Connection :

DRAIN

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V