AOB4S60L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.9Ohm

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Power Dissipation-Max :

83W Tc

Series :

aMOS™

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

77 mJ

Mount :

Surface Mount

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

4A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2011

Case Connection :

DRAIN

Pbfree Code :

yes

Number of Terminations :

2

Power Dissipation :

83W

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

4A

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

263pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount