AOB12T60PL

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

520m Ω @ 6A, 10V

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain-source On Resistance-Max :

0.52Ohm

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Continuous Drain Current (ID) :

12A

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2028pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

48A

Number of Terminations :

2

Terminal Form :

Gull wing

Power Dissipation-Max :

250W Tc

Avalanche Energy Rating (Eas) :

750 mJ

Terminal Position :

Single

Case Connection :

DRAIN