AO4441

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

31.5 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-60V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1120pF @ 30V

Threshold Voltage :

-2.1V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

100m Ω @ 4A, 10V

Mount :

Surface Mount

Turn On Delay Time :

8 ns

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

Power Dissipation :

3.1W

Height :

1.75mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-4A

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.1W Ta

Number of Terminations :

8

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Published :

2005