AO3413

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

3A

Radiation Hardening :

No

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.08Ohm

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 4.5V

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

P-Channel

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

97m Ω @ 3A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Published :

2010

Terminal Position :

Dual

Pin Count :

3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation :

1.4W

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.4W Ta

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Voltage (Vdss) :

20V