AFT27S012NT1

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Mfr.Part #
AFT27S012NT1
Manufacturer
NXP Semiconductors
Package / Case
PLD-1.5W
Datasheet
Download
Description
AIRFAST RF POWER LDMOS TRANSISTO
Stock
5,475
In Stock :
5,475

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power - Output :
13W
RoHS Status :
ROHS3 Compliant
Published :
2006
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
PLD-1.5W
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Transistor Type :
LDMOS
Voltage - Test :
28V
Factory Lead Time :
10 Weeks
Gain :
20.9dB
Current Rating (Amps) :
10μA
Voltage - Rated :
65V
Frequency :
728MHz~2.7GHz
Current - Test :
90mA
Datasheets
AFT27S012NT1
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors AFT27S012NT1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLD-1.5W, Gain:20.9dB, AFT27S012NT1 pinout, AFT27S012NT1 datasheet PDF, AFT27S012NT1 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors AFT27S012NT1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors AFT27S012NT1


AFT27S012NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

Description: The AFT27S012NT1 is a RF power LDMOS transistor from NXP Semiconductors. It is designed for use in high power, high frequency applications such as cellular base stations, broadcast transmitters, and industrial, scientific, and medical (ISM) applications.

Features:
• High power gain of up to 17 dB
• High efficiency of up to 70%
• Low thermal resistance of up to 0.5°C/W
• Low gate charge of up to 10 nC
• Low gate-source capacitance of up to 0.2 pF

Applications:
• Cellular base stations
• Broadcast transmitters
• Industrial, scientific, and medical (ISM) applications
• High power, high frequency applications
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