AFT21S230SR3
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- Mfr.Part #
- AFT21S230SR3
- Manufacturer
- NXP Semiconductors
- Package / Case
- NI-780S
- Datasheet
- Download
- Description
- FET RF 65V 2.11GHZ NI780S-6
- Stock
- 933
- In Stock ：
- 933
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 2.11GHz
- Voltage - Test :
- 28V
- Transistor Type :
- LDMOS
- Voltage - Rated :
- 65V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- NI-780S
- Gain :
- 16.7dB
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- HTS Code :
- 8541.29.00.40
- RoHS Status :
- ROHS3 Compliant
- Current - Test :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Configuration :
- Single
- Power - Output :
- 50W
- Factory Lead Time :
- 10 Weeks
- Power Dissipation-Max (Abs) :
- 161W
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature (Max) :
- 150°C
- ECCN Code :
- EAR99
- Datasheets
- AFT21S230SR3
AFT21S230SR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
AFT21S230SR3 Description
These 50 W RF power LDMOS transistors are intended for use in cellular base station applications operating in the 2110 to 2170 MHz frequency range. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. This product can be applied in a variety of circumstances and is meant for general use.
AFT21S230SR3 Features
-
Improved Class C Operation through Extended Negative Gate-Source Voltage Range
-
Incorporated into Digital Predistortion Error Correction Systems
-
Designed with Doherty Applications in Mind
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R3 Suffix = 250 Units, 44 mm Tape Width, NI—780S—2L2L, NI—780S—2L4S thirteen-inch reel
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R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel, NI—780S—2L. See page 17 for possibilities for R5 Tape and Reels.
AFT21S230SR3 Applications
Switching applications
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