AFT27S010NT1
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- Mfr.Part #
- AFT27S010NT1
- Manufacturer
- NXP Semiconductors
- Package / Case
- PLD-1.5W
- Datasheet
- Download
- Description
- FET RF NCH 65V 2700MHZ PLD1.5W
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Transistor Type :
- LDMOS
- Factory Lead Time :
- 10 Weeks
- Published :
- 2013
- Surface Mount :
- yes
- Package / Case :
- PLD-1.5W
- ECCN Code :
- EAR99
- Voltage - Test :
- 28V
- Current - Test :
- 90mA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated :
- 65V
- Gain :
- 21.7dB
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 2.17GHz
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Power - Output :
- 1.26W
- HTS Code :
- 8541.29.00.40
- Operating Temperature (Max) :
- 150°C
- Polarity/Channel Type :
- N-Channel
- Datasheets
- AFT27S010NT1
AFT27S010NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
AFT27S010NT1 Description
AFT27S010NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes AFT27S010NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S010NT1 has the common source configuration.
AFT27S010NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
AFT27S010NT1 Applications
ISM applications
DC large signal applications
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