AFT27S006NT1

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Mfr.Part #
AFT27S006NT1
Manufacturer
NXP Semiconductors
Package / Case
PLD-1.5W
Datasheet
Download
Description
RF MOSFET LDMOS 28V PLD1.5W
Stock
1,741
In Stock :
1,741

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - FETs, MOSFETs - RF
Gain :
22dB
Operating Temperature (Min) :
-40°C
Voltage - Rated :
65V
Terminal Finish :
Tin (Sn)
Configuration :
Single
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e3
Factory Lead Time :
10 Weeks
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Flat
Operating Temperature (Max) :
150°C
Package / Case :
PLD-1.5W
JESD-30 Code :
R-PDFM-F2
RoHS Status :
ROHS3 Compliant
Current - Test :
70mA
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Power Dissipation Ambient-Max :
1.5W
Number of Elements :
1
Voltage - Test :
28V
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Power - Output :
28.8dBm
Frequency :
2.17GHz
Reach Compliance Code :
not_compliant
Number of Terminations :
2
Published :
2013
Polarity/Channel Type :
N-Channel
Transistor Type :
LDMOS
Terminal Position :
Dual
Datasheets
AFT27S006NT1
Introducing Transistors - FETs, MOSFETs - RF NXP Semiconductors AFT27S006NT1 from Chip IC,where excellence meets affordability. This product stands out with its Gain:22dB, Package / Case:PLD-1.5W, Number of Terminations:2, AFT27S006NT1 pinout, AFT27S006NT1 datasheet PDF, AFT27S006NT1 amp .Beyond Transistors - FETs, MOSFETs - RF NXP Semiconductors AFT27S006NT1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors AFT27S006NT1


AFT27S006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at

AFT27S006NT1 Description

 

AFT27S006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor AFT27S006NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S006NT1 has the common source configuration.

 

 

AFT27S006NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT27S006NT1 Applications

 

ISM applications

DC large signal applications


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