AFT09S200W02NR3

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-30 Code :

R-PDFP-F2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Frequency :

960MHz

Time@Peak Reflow Temperature-Max (s) :

40

Current - Test :

1.4A

Surface Mount :

yes

Number of Terminations :

2

Terminal Position :

Dual

Transistor Type :

LDMOS

Power - Output :

56W

DS Breakdown Voltage-Min :

70V

Packaging :

Tape and Reel (TR)

Voltage - Rated :

70V

Transistor Element Material :

SILICON

Package / Case :

OM-780-2

Published :

2009

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Terminal Form :

Flat

HTS Code :

8541.29.00.40

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Case Connection :

SOURCE

Gain :

19.2dB

Voltage - Test :

28V

Configuration :

Single