AFT09MS007NT1
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- Mfr.Part #
- AFT09MS007NT1
- Manufacturer
- NXP Semiconductors
- Package / Case
- PLD-1.5W
- Datasheet
- Download
- Description
- FET RF 30V 870MHZ PLD1.5W
- Stock
- 8,413
- In Stock ：
- 8,413
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature (Max) :
- 150°C
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Voltage - Test :
- 7.5V
- HTS Code :
- 8541.29.00.40
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- LDMOS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- PLD-1.5W
- Voltage - Rated :
- 30V
- Frequency :
- 870MHz
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- yes
- Configuration :
- Single
- Gain :
- 15.2dB
- Factory Lead Time :
- 10 Weeks
- JESD-609 Code :
- e3
- Power - Output :
- 7.3W
- Current - Test :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Power Dissipation-Max (Abs) :
- 182W
- Datasheets
- AFT09MS007NT1
AFT09MS007NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at
AFT09MS007NT1 Description
AFT09MS007NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes AFT09MS007NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT09MS007NT1 has the common source configuration.
AFT09MS007NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
AFT09MS007NT1 Applications
ISM applications
DC large signal applications
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