64-2105PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

200W Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On Max :

3.7 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Series :

HEXFET®

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Packaging :

Tube

Mounting Type :

Through Hole

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Rds On (Max) @ Id, Vgs :

3.7mOhm @ 75A, 10V

Input Capacitance :

4.34nF

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Min Operating Temperature :

-55°C

Mount :

Through Hole

Supplier Device Package :

TO-262