630AT

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

11.8 nC @ 10 V

Power Dissipation (Max) :

83W (Tc)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Voltage (Vdss) :

200 V

Mounting Type :

Through Hole

Product Status :

Active

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

509 pF @ 25 V

Rds On (Max) @ Id, Vgs :

250mOhm @ 1A, 10V

Package :

Tube

Supplier Device Package :

TO-220

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Technology :

MOSFET (Metal Oxide)

Series :

-

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-