4N35M

Manufacturer :

onsemi

Product Category :

Optoisolators - Transistor, Photovoltaic Output

Min Operating Temperature :

-40°C

Input Type :

DC

Collector Emitter Saturation Voltage :

300mV

Rise Time :

2μs

Contact Plating :

Tin

Height :

6.35mm

Current Transfer Ratio (Min) :

100% @ 10mA

Collector Emitter Voltage (VCEO) :

300mV

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Channels :

1

Input Current :

10mA

Voltage - Forward (Vf) (Typ) :

1.18V

Supplier Device Package :

6-DIP

Max Output Voltage :

30V

Reverse Breakdown Voltage :

6V

Lead Free :

Lead Free

Length :

6.35mm

Reverse Voltage (DC) :

6V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Circuits :

1

Power Dissipation :

250mW

Current - DC Forward (If) (Max) :

60mA

Voltage - Output (Max) :

30V

RoHS Status :

ROHS3 Compliant

Weight :

855mg

Max Power Dissipation :

250mW

Output Type :

Transistor with Base

Base Part Number :

4N35

Forward Current :

60mA

Package / Case :

6-DIP (0.300, 7.62mm)

Operating Temperature :

-40°C~100°C

Width :

6.35mm

Number of Pins :

6

Max Operating Temperature :

100°C

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Output Voltage :

30V

Packaging :

Tube

REACH SVHC :

No SVHC

Max Input Current :

50mA

Mount :

Through Hole

Vce Saturation (Max) :

300mV

Published :

2008

Forward Voltage :

1.5V

Factory Lead Time :

6 Weeks

Turn On / Turn Off Time (Typ) :

2μs, 2μs

Voltage - Isolation :

4170Vrms