4N35M

Manufacturer :

onsemi

Product Category :

Optoisolators - Transistor, Photovoltaic Output

Output Voltage :

30V

Power Dissipation :

250mW

Voltage - Forward (Vf) (Typ) :

1.18V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Current - DC Forward (If) (Max) :

60mA

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Pins :

6

Height :

6.35mm

Forward Voltage :

1.5V

Max Output Voltage :

30V

Radiation Hardening :

No

Voltage - Isolation :

4170Vrms

Voltage - Output (Max) :

30V

Operating Temperature :

-40°C~100°C

Vce Saturation (Max) :

300mV

Input Current :

10mA

Width :

6.35mm

Collector Emitter Saturation Voltage :

300mV

Output Type :

Transistor with Base

Reverse Voltage (DC) :

6V

Min Operating Temperature :

-40°C

Packaging :

Tube

Contact Plating :

Tin

Forward Current :

60mA

Base Part Number :

4N35

Max Power Dissipation :

250mW

Rise Time :

2μs

Length :

6.35mm

Weight :

855mg

Factory Lead Time :

6 Weeks

Input Type :

DC

Collector Emitter Voltage (VCEO) :

300mV

Number of Circuits :

1

Published :

2008

Reverse Breakdown Voltage :

6V

Turn On / Turn Off Time (Typ) :

2μs, 2μs

Supplier Device Package :

6-DIP

Lead Free :

Lead Free

Package / Case :

6-DIP (0.300, 7.62mm)

Max Input Current :

50mA

Mounting Type :

Through Hole

Current Transfer Ratio (Min) :

100% @ 10mA

Number of Channels :

1

Max Operating Temperature :

100°C

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)