4N35-000E
- Mfr.Part #
- 4N35-000E
- Manufacturer
- Broadcom
- Package / Case
- 6-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- OPTOISO 3.55KV TRANS W/BASE 6DIP
- Stock
- 12,095
- In Stock :
- 12,095
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- Manufacturer :
- Broadcom
- Product Category :
- Optoisolators - Transistor, Photovoltaic Output
- Max Output Voltage :
- 30V
- Published :
- 2007
- Rise / Fall Time (Typ) :
- 3μs 3μs
- Base Part Number :
- 4N35
- Forward Current :
- 60mA
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 70V
- Output Type :
- Transistor with Base
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 300mV
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Current Transfer Ratio (Min) :
- 100% @ 10mA
- Packaging :
- Tube
- Package / Case :
- 6-DIP (0.300, 7.62mm)
- Breakdown Voltage :
- 30V
- Voltage - Isolation :
- 3550Vrms
- Number of Pins :
- 6
- Approval Agency :
- CSA, UL, VDE
- Fall Time (Typ) :
- 10 μs
- Collector Emitter Voltage (VCEO) :
- 300mV
- Input Type :
- DC
- Max Power Dissipation :
- 350mW
- ECCN Code :
- EAR99
- Current Transfer Ratio :
- 100%
- Max Collector Current :
- 100mA
- Optoelectronic Device Type :
- TRANSISTOR OUTPUT OPTOCOUPLER
- Output Voltage :
- 30V
- Power Dissipation :
- 350mW
- Contact Plating :
- Tin
- Max Input Current :
- 60mA
- Operating Temperature :
- -55°C~100°C
- Factory Lead Time :
- 22 Weeks
- RoHS Status :
- ROHS3 Compliant
- Input Current :
- 10mA
- Additional Feature :
- UL RECOGNIZED
- Voltage - Forward (Vf) (Typ) :
- 1.2V
- Rise Time :
- 10μs
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reverse Breakdown Voltage :
- 6V
- Output Current per Channel :
- 100mA
- Dark Current-Max :
- 500000nA
- Mounting Type :
- Through Hole
- Datasheets
- 4N35-000E
4N35-000E Documents

4N35-000E datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Broadcom Limited stock available at
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