4N35-000E

Manufacturer :

Broadcom

Product Category :

Optoisolators - Transistor, Photovoltaic Output

Rise / Fall Time (Typ) :

3μs 3μs

Collector Emitter Breakdown Voltage :

70V

Current Transfer Ratio (Min) :

100% @ 10mA

Approval Agency :

CSA, UL, VDE

Collector Emitter Saturation Voltage :

300mV

Current Transfer Ratio :

100%

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

350mW

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

300mV

Configuration :

Single

Number of Pins :

6

Published :

2007

Base Part Number :

4N35

Input Current :

10mA

Packaging :

Tube

Radiation Hardening :

No

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Fall Time (Typ) :

10 μs

Max Output Voltage :

30V

Package / Case :

6-DIP (0.300, 7.62mm)

Input Type :

DC

Output Type :

Transistor with Base

Rise Time :

10μs

Output Voltage :

30V

Optoelectronic Device Type :

TRANSISTOR OUTPUT OPTOCOUPLER

Output Current per Channel :

100mA

Mount :

Through Hole

Voltage - Isolation :

3550Vrms

Power Dissipation :

350mW

Voltage - Forward (Vf) (Typ) :

1.2V

Breakdown Voltage :

30V

Forward Current :

60mA

Factory Lead Time :

22 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

UL RECOGNIZED

ECCN Code :

EAR99

Number of Elements :

1

Dark Current-Max :

500000nA

Operating Temperature :

-55°C~100°C

Max Input Current :

60mA

Reverse Breakdown Voltage :

6V

Lead Free :

Lead Free

Max Collector Current :

100mA

Contact Plating :

Tin