4N35-W00E

Manufacturer :

Broadcom

Product Category :

Optoisolators - Transistor, Photovoltaic Output

Published :

2007

Contact Plating :

Tin

Factory Lead Time :

17 Weeks

JESD-609 Code :

e3

Base Part Number :

4N35

REACH SVHC :

No SVHC

Forward Current :

60mA

Rise / Fall Time (Typ) :

3μs 3μs

Mounting Type :

Through Hole

Output Current per Channel :

100mA

Packaging :

Tube

Max Power Dissipation :

350mW

Input Current :

10mA

Max Collector Current :

100mA

Radiation Hardening :

No

Voltage - Isolation :

3550Vrms

Reverse Breakdown Voltage :

6V

Mount :

Through Hole

Current Transfer Ratio (Min) :

100% @ 10mA

Collector Emitter Voltage (VCEO) :

30V

Package / Case :

6-DIP (0.400, 10.16mm)

Additional Feature :

UL RECOGNIZED

Max Input Current :

60mA

Dark Current-Max :

500000nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Transfer Ratio :

100%

Output Voltage :

30V

Rise Time :

10μs

Power Dissipation :

350mW

Optoelectronic Device Type :

TRANSISTOR OUTPUT OPTOCOUPLER

Input Type :

DC

Max Output Voltage :

30V

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

300mV

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Operating Temperature :

-55°C~100°C

Fall Time (Typ) :

10 μs

Configuration :

Single

Voltage - Forward (Vf) (Typ) :

1.2V

Output Current :

100mA

Lead Free :

Lead Free

Output Type :

Transistor with Base