3LN01S-TL-E
- Mfr.Part #
- 3LN01S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 3LN01 - 30 VOLT, 0.15 A, 3.7 OHM
- Stock
- 274,203
- In Stock :
- 274,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 750μm
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Continuous Drain Current (ID) :
- 150mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4V
- Power Dissipation-Max :
- 150mW Ta
- Rise Time :
- 65ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 150mW
- Fall Time (Typ) :
- 120 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 7pF @ 10V
- Width :
- 800μm
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 30V
- Published :
- 2006
- Current - Continuous Drain (Id) @ 25°C :
- 150mA Ta
- Drain Current-Max (Abs) (ID) :
- 0.15A
- Mount :
- Surface Mount
- JESD-609 Code :
- e6
- Turn-Off Delay Time :
- 155 ns
- Turn On Delay Time :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 3.7 Ω @ 80mA, 4V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 1.6mm
- Element Configuration :
- Single
- Number of Pins :
- 3
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Vgs (Max) :
- ±10V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.58nC @ 10V
- Pin Count :
- 3
- Datasheets
- 3LN01S-TL-E

N-Channel Tape & Reel (TR) 3.7 Ω @ 80mA, 4V ±10V 7pF @ 10V 1.58nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
3LN01S-TL-E Overview
A device's maximum input capacitance is 7pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 150mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 0.15A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4V) to reduce its overall power consumption.
3LN01S-TL-E Features
a continuous drain current (ID) of 150mA
the turn-off delay time is 155 ns
a 30V drain to source voltage (Vdss)
3LN01S-TL-E Applications
There are a lot of ON Semiconductor
3LN01S-TL-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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