2SK2887TL
- Mfr.Part #
- 2SK2887TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3A CPT3
- Stock
- 1,320
- In Stock :
- 1,320
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.9Ohm
- Turn-Off Delay Time :
- 26 ns
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 10V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 12A
- Current Rating :
- 3A
- Published :
- 1998
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 34 ns
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 3A
- Power Dissipation-Max :
- 20W Tc
- Power Dissipation :
- 20W
- JESD-609 Code :
- e2
- Continuous Drain Current (ID) :
- 3A
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 12ns
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 1.5A, 10V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SK2887TL

N-Channel Tape & Reel (TR) 900m Ω @ 1.5A, 10V ±30V 230pF @ 10V 8.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2887TL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 230pF @ 10V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 26 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 12A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
2SK2887TL Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 26 ns
based on its rated peak drain current 12A.
2SK2887TL Applications
There are a lot of ROHM Semiconductor
2SK2887TL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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