2SK2394-7-TB-E
- Mfr.Part #
- 2SK2394-7-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- JFET N-CH 50MA 200MW 3CP
- Stock
- 1,690
- In Stock :
- 1,690
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - JFETs
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 0.05A
- Drain to Source Voltage (Vdss) :
- 15V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- -10V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Continuous Drain Current (ID) :
- 50mA
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 10pF @ 5V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 2.9mm
- FET Type :
- N-Channel
- Max Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Voltage - Cutoff (VGS off) @ Id :
- 300mV @ 100μA
- Transistor Application :
- AMPLIFIER
- Published :
- 1999
- Height :
- 1.1mm
- Width :
- 1.5mm
- FET Technology :
- JUNCTION
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 16mA @ 5V
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- LOW NOISE
- Terminal Form :
- Gull wing
- Operating Mode :
- Depletion Mode
- HTS Code :
- 8541.21.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- 2SK2394-7-TB-E

2SK2394-7-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at
2SK2394-7-TB-E Description
IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.
2SK2394-7-TB-E Features
· 75% lower Eoff compared to previous generation
combined with low conduction losses
· Short circuit withstand time – 10 ms
· Designed for:
- Motor controls
- Inverter
· NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
· Very soft, fast recovery anti-parallel Emitter Controlled
Diode
· Pb-free lead plating; RoHS compliant
· Qualified according to JEDEC1 for target applications
2SK2394-7-TB-E Applications
? Industrial Control
? Medical monitoring
? Home automation/ alarm/ energy management
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