2SK2394-7-TB-E

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Mfr.Part #
2SK2394-7-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
JFET N-CH 50MA 200MW 3CP
Stock
1,690
In Stock :
1,690

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Manufacturer :
onsemi
Product Category :
Transistors - JFETs
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
0.05A
Drain to Source Voltage (Vdss) :
15V
Transistor Element Material :
SILICON
Number of Elements :
1
Gate to Source Voltage (Vgs) :
-10V
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Continuous Drain Current (ID) :
50mA
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
10pF @ 5V
Lead Free :
Lead Free
JESD-609 Code :
e6
Number of Pins :
3
Mount :
Surface Mount
Pin Count :
3
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Length :
2.9mm
FET Type :
N-Channel
Max Power Dissipation :
200mW
Terminal Position :
Dual
Number of Terminations :
3
Voltage - Cutoff (VGS off) @ Id :
300mV @ 100μA
Transistor Application :
AMPLIFIER
Published :
1999
Height :
1.1mm
Width :
1.5mm
FET Technology :
JUNCTION
Current - Drain (Idss) @ Vds (Vgs=0) :
16mA @ 5V
Pbfree Code :
yes
Factory Lead Time :
2 Weeks
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Additional Feature :
LOW NOISE
Terminal Form :
Gull wing
Operating Mode :
Depletion Mode
HTS Code :
8541.21.00.95
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Datasheets
2SK2394-7-TB-E
Introducing Transistors - JFETs onsemi 2SK2394-7-TB-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, 2SK2394-7-TB-E pinout, 2SK2394-7-TB-E datasheet PDF, 2SK2394-7-TB-E amp .Beyond Transistors - JFETs onsemi 2SK2394-7-TB-E ,we also offer J112-D74Z, MMBFU310LT1G, SMMBF4393LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SK2394-7-TB-E


2SK2394-7-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at

2SK2394-7-TB-E                  Description


IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.




2SK2394-7-TB-E                          Features


· 75% lower Eoff compared to previous generation

combined with low conduction losses

· Short circuit withstand time – 10 ms

· Designed for:

- Motor controls

- Inverter

· NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

· Very soft, fast recovery anti-parallel Emitter Controlled

Diode

· Pb-free lead plating; RoHS compliant

· Qualified according to JEDEC1 for target applications

 

 

2SK2394-7-TB-E                             Applications


? Industrial Control

? Medical monitoring

? Home automation/ alarm/ energy management

 


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