2SK2376(Q)
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- Mfr.Part #
- 2SK2376(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A TO220FL
- Stock
- 21,121
- In Stock ：
- 21,121
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Power Dissipation :
- 100W
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3, Short Tab
- Current - Continuous Drain (Id) @ 25°C :
- 45A Ta
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 45A
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3350pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 25A, 10V
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Power Dissipation-Max :
- 100W Tc
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Published :
- 2009
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Datasheets
- 2SK2376(Q)
.JPG)
N-Channel Tube 17m Ω @ 25A, 10V ±20V 3350pF @ 10V 110nC @ 10V TO-220-3, Short Tab
2SK2376(Q) Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3350pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
2SK2376(Q) Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 60V voltage
2SK2376(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SK2376(Q) applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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